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SMD-LED
16.11.2007 Radiation Infrared Type SMD Technology AlGaAs/AlGaAs
ELS-870-195-1
rev. 04 Case SMD 1206
Description
1,6 0,5
Cathode mark
Die
High-power, high speed LED in standard SMD package, compact design allows for easy circuit board mounting or assembling of arrays
3,2
2,0
2,2
Applications
Optical communications, remote control and light barriers, measurement applications and security systems, automation
All dimensions in mm Tolerances: 0,1mm
Absolute Maximum Ratings
at Tamb = 25C, unless otherwise specified Parameter DC forward current Peak forward current Power dissipation Operating temperature range Storage temperature range tp 10 s, tp/T 0.1 Test onditions Symbol IF IFM P Tamb Tstg Value 100 1000 200 -20 to +85 -30 to +100 Unit mA mA mW C C
Electrical and Optical Characteristics
at Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Forward voltage Reverse voltage Radiant power Radiant intensity Peak wavelength Spectral bandwidth at 50% Viewing angle Switching time IF = 20 mA IF = 100 mA IF = 10 A IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA Symbol VF VF VR e e p 0.5 tr , t f 850 5 20 25 7,2 870 40 150 15 880 Min Typ 1,4 1,5 Max 1,7 Unit V V V mW mW/sr nm nm deg. ns
Note: All measurements carried out with EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 1 of 1 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
R
0,2 5
1,05
0,5

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